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Freescale Semiconductor Technical Data
Replaced by MRF6S9060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
Document Number: MRF6S9060 Rev. 2, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. * Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA, Pout = 14 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 21.4 dB Drain Efficiency -- 32.1% ACPR @ 750 kHz Offset -- - 47.6 dBc @ 30 kHz Bandwidth GSM EDGE Application * Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 21 Watts Avg., Full Frequency Band (921 - 960 MHz) Power Gain -- 20 dB Drain Efficiency -- 46% Spectral Regrowth @ 400 kHz Offset = - 62 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM -- 1.5% rms GSM Application * Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 60 Watts, Full Frequency Band (921 - 960 MHz) Power Gain -- 20 dB Drain Efficiency -- 63% * Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 60 Watts CW Output Power * Characterized with Series Equivalent Large - Signal Impedance Parameters * Integrated ESD Protection * 200C Capable Plastic Package * TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. * TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF6S9060MR1 MRF6S9060MBR1
ARCHIVE INFORMATION
CASE 1265 - 08, STYLE 1 TO - 270 - 2 PLASTIC MRF6S9060MR1
CASE 1337 - 03, STYLE 1 TO - 272 - 2 PLASTIC MRF6S9060MBR1
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value - 0.5, +68 - 0.5, + 12 227 1.3 - 65 to +150 200 Unit Vdc Vdc W W/C C C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF6S9060MR1 MRF6S9060MBR1 1
RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
880 MHz, 14 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 60 W CW Case Temperature 80C, 14 W CW Symbol RJC Value (1,2) 0.77 0.88 Unit C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A (Minimum) A (Minimum) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Rating 3 Package Peak Temperature 260 Unit Per JESD 22 - A113, IPC/JEDEC J - STD - 020 C
ARCHIVE INFORMATION
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 A) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 450 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 1.5 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) Dynamic Characteristics Input Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss Coss Crss -- -- -- 106 33 1.4 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) gfs 1 -- -- -- 2 2.9 0.18 4.2 3 -- 0.4 -- Vdc Vdc Vdc S IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, Pout = 14 W Avg., f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss Gps D ACPR IRL 20.5 30.5 -- -- 21.4 32.1 - 47.6 - 15.3 23.5 -- - 45 -9 dB % dBc dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
MRF6S9060MR1 MRF6S9060MBR1 2 RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 921 - 960 MHz, 50 hm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 21 W Avg., f = 921 - 960 MHz, GSM EDGE Signal Power Gain Drain Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset Gps D EVM SR1 SR2 -- -- -- -- -- 20 46 1.5 - 62 - 78 -- -- -- -- -- dB % % dBc dBc
Typical CW Performances (In Freescale GSM Test Fixture Optimized for 921 - 960 MHz, 50 hm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 60 W, f = 921 - 960 MHz Power Gain Drain Efficiency Gps D IRL P1dB -- -- -- -- 20 63 - 12 67 -- -- -- -- dB % dB W
ARCHIVE INFORMATION
Input Return Loss Pout @ 1 dB Compression Point (f = 940 MHz)
MRF6S9060MR1 MRF6S9060MBR1 RF Device Data Freescale Semiconductor 3
ARCHIVE INFORMATION
B1 R1 VBIAS + C9 RF INPUT + C7 R2 R3 C8 L1 Z10 Z1 C1 C2 C3 C4 C5 Z2 Z3 Z4 Z5 Z6 Z7 Z8 C6 Z9 C10 DUT C11 L2 Z11
B2 + C15 C16 + C17 + C19
R4
VSUPPLY
C18 RF Z15 OUTPUT
Z12
Z13
Z14 C14
C12
C13
ARCHIVE INFORMATION
Figure 1. MRF6S9060MR1(MBR1) Test Circuit Schematic
Table 6. MRF6S9060MR1(MBR1) Test Circuit Component Designations and Values
Part B1 B2 C1, C8, C14, C15 C2, C4, C13 C3 C5, C6 C7, C16, C17 C9 C10, C11 C12 C18 C19 L1, L2 R1 R2 R3 R4 Ferrite Bead Ferrite Bead 47 pF Chip Capacitors 0.8 - 8.0 pF Variable Capacitors, Gigatrim 3.0 pF Chip Capacitor 15 pF Chip Capacitors 10 F, 35 V Tantalum Capacitors 100 F, 50 V Electrolytic Capacitor 13 pF Chip Capacitors 3.9 pF Chip Capacitor 0.56 F Chip Capacitor 470 F, 63 V Electrolytic Capacitor 12.5 nH Inductor 1 k Chip Resistor 560 k Chip Resistor 12 Chip Resistor 27 W Chip Resistor Description 95F786 95F787 100B470JP500X 44F3360 100B3R0JP500X 100B150JP500X 93F2975 51F2913 100B130JP500X 100B3R9JP500X 700A561MP150X 95F4579 A04T - 5 05F1545 84N2435 97C9103 04H7058 Part Number Manufacturer Newark Newark Newark Newark Newark Newark Newark Newark Newark Newark Newark Newark Coilcraft Newark Newark Newark Newark
MRF6S9060MR1 MRF6S9060MBR1 4 RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8
0.215 0.221 0.500 0.460 0.040 0.280 0.087 0.435
x 0.065 x 0.065 x 0.100 x 0.270 x 0.270 x 0.270 x 0.525 x 0.525
Microstrip Microstrip Microstrip Microstrip Microstrip x 0.530 Taper Microstrip Microstrip
Z9 Z10 Z11 Z12 Z13 Z14 Z15 PCB
0.057 x 0.525 Microstrip 0.360 x 0.270 Microstrip 0.063 x 0.270 Microstrip 0.360 x 0.065 Microstrip 0.170 x 0.065 Microstrip 0.880 x 0.065 Microstrip 0.260 x 0.065 Microstrip Taconic RF - 35 0.030, r = 3.5
C7
R2 B1 R3
C19 VDD C16 C17
VGG
R1
B2 C8
R4
C9 L1 C1 C2 C3 C5 C6
C15 L2 CUT OUT AREA C11 C10
C18
C12 C13 C14
ARCHIVE INFORMATION
C4
TO-270/272 Surface / Bolt down
Figure 2. MRF6S9060MR1(MBR1) Test Circuit Component Layout
MRF6S9060MR1 MRF6S9060MBR1 RF Device Data Freescale Semiconductor 5
ARCHIVE INFORMATION
TYPICAL CHARACTERISTICS
VDD = 28 Vdc, Pout = 14 W (Avg.), IDQ = 450 mA N-CDMA IS-95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 Gps 21.4 ACPR 21.2 21 20.8 ALT1 20.6 IRL -50 -55 -60 -65 920 -45 ACPR (dBc), ALT1 (dBc) D, DRAIN EFFICIENCY (%) -8 -12 -16 -20 -24 22 21.8 Gps, POWER GAIN (dB) 21.6 40 D 35 30
ARCHIVE INFORMATION
f, FREQUENCY (MHz)
Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 14 Watts Avg.
Gps, POWER GAIN (dB)
VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 450 mA 21.4 N-CDMA IS-95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 21.2 21 Gps 20.8
D
48 46 44 -32 ACPR -40
D, DRAIN EFFICIENCY (%)
21.6
50
20.6 20.4 20.2 20 840 IRL ALT1
ACPR (dBc), ALT1 (dBc)
-4 -8 -12 -16 -20
-48 -56 -64 920
850
860
870
880
890
900
910
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 28 Watts Avg.
23 22 Gps, POWER GAIN (dB) 21 20 225 mA 19 18 17 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 300 VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements, 100 kHz Tone Spacing IDQ = 675 mA 550 mA 450 mA 350 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc)
-10 VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements, 100 kHz Tone Spacing -20
-30
IDQ = 225 mA
-40
350 mA
-50 450 mA 550 mA -60 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 675 mA
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF6S9060MR1 MRF6S9060MBR1 6 RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
840
850
860
870
880
890
900
910
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc, IDQ = 450 mA, f1 = 880 MHz -20 f2 = 880.1 MHz, Two-Tone Measurements Center Frequency = 880 MHz -30 -40 -50 -60 5th Order -70 -80 1 7th Order 10 Pout, OUTPUT POWER (WATTS) PEP 100 300
IMD, INTERMODULATION DISTORTION (dBc)
-10
0 -10 -20 -30 3rd Order -40 -50 -60 5th Order VDD = 28 Vdc, Pout = 60 W (PEP) IDQ = 450 mA, Two-Tone Measurements Center Frequency = 880 MHz
3rd Order
ARCHIVE INFORMATION
1
10
100
300
TWO-TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products versus Output Power
56 55 54 Pout, OUTPUT POWER (dBm) 53 52 51 50 49 48 47 46 45 44 22 23 24 25 26 27
Figure 8. Intermodulation Distortion Products versus Tone Spacing
P3dB = 50 dBm (150 W)
Ideal
P1dB = 49.1 dBm (100 W) Actual
VDD = 28 Vdc, IDQ = 450 mA Pulsed CW, 8 sec(on), 1 msec(off) Center Frequency = 880 MHz 28 29 30 31 32 33 34
Pin, INPUT POWER (dBm)
Figure 9. Pulse CW Output Power versus Input Power
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 55 45 35 25 15 5 -5 1 10 Pout, OUTPUT POWER (WATTS) AVG. Gps TC = 25_C 85_C -30_C 25_C -75 -85 VDD = 28 Vdc, IDQ = 450 mA f = 880 MHz, N-CDMA IS-95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 D 25_C -35 ALT1 85_C -45 -30_C 25_C ACPR -55 -65 -25 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBc)
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power MRF6S9060MR1 MRF6S9060MBR1 RF Device Data Freescale Semiconductor 7
ARCHIVE INFORMATION
7th Order -70 0.05 0.1
TYPICAL CHARACTERISTICS
22 21.5 Gps, POWER GAIN (dB) 21 20.5 85_C 20 19.5 19 18.5 D VDD = 28 Vdc IDQ = 450 mA f = 880 MHz 10 Pout, OUTPUT POWER (WATTS) CW TC = -30_C 25_C Gps
-30_C 25_C 85_C
80 70 60 50 40 30 20 10 D, DRAIN EFFICIENCY (%)
ARCHIVE INFORMATION
1
100
Figure 11. Power Gain and Drain Efficiency versus CW Output Power
22 21 20 19 18 17 16 15 14 13 12 11 10 0 10 20 V 16 V VDD = 12 V 20 30 40 50 60 IDQ = 450 mA f = 880 MHz 70 80 90 100 110 120 130 140 28 V 24 V 32 V
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
109 MTTF FACTOR (HOURS X AMPS2)
108
107
106 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 13. MTTF Factor versus Junction Temperature MRF6S9060MR1 MRF6S9060MBR1 8 RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
18
0
Gps, POWER GAIN (dB)
N - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 0.1 0.01 0.001 IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ 750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. (dB)
-10 -20 -30 -40 -50 -60 -70 -80 -90 0 2 4 6 8 10 -100 -110 -3.6 -2.9 -2.2
1.2288 MHz Channel BW
ARCHIVE INFORMATION
0.0001 PEAK-TO-AVERAGE (dB)
Figure 14. Single - Carrier CCDF N - CDMA
-1.5 -0.7
0
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 15. Single - Carrier N - CDMA Spectrum
MRF6S9060MR1 MRF6S9060MBR1 RF Device Data Freescale Semiconductor 9
ARCHIVE INFORMATION
-ACPR @ 30 kHz Integrated BW
+ACPR @ 30 kHz Integrated BW
ARCHIVE INFORMATION
f = 910 MHz f = 910 MHz Zsource Zload f = 850 MHz f = 850 MHz
VDD = 28 Vdc, IDQ = 450 mA, Pout = 14 W Avg. f MHz 850 865 880 895 910 Zsource 0.44 - j0.20 0.44 - j0.07 0.45 + j0.50 0.48 + j0.18 0.52 + j0.29 Zload 2.28 + j0.23 2.18 + j0.33 2.20 + j0.47 2.15 + j0.61 2.00 + j0.68
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MRF6S9060MR1 MRF6S9060MBR1 10 RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
Zo = 5
NOTES
MRF6S9060MR1 MRF6S9060MBR1 RF Device Data Freescale Semiconductor 11
PACKAGE DIMENSIONS
MRF6S9060MR1 MRF6S9060MBR1 12 RF Device Data Freescale Semiconductor
MRF6S9060MR1 MRF6S9060MBR1 RF Device Data Freescale Semiconductor 13
MRF6S9060MR1 MRF6S9060MBR1 14 RF Device Data Freescale Semiconductor
2X
aaa
M
r1 CAB
DRAIN ID
B
E1
A
GATE LEAD
DRAIN LEAD
D1
2X
b1 aaa
M
CA
D
2
E
c1
H
DATUM PLANE
F ZONE "J"
A
A1 A2 7 Y E2 Y
C
SEATING PLANE
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE -H- IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE "b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. 8. CROSSHATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. DIM A A1 A2 D D1 E E1 E2 F b1 c1 r1 aaa INCHES MIN MAX .100 .104 .039 .043 .040 .042 .928 .932 .810 BSC .438 .442 .248 .252 .241 .245 .025 BSC .193 .199 .007 .011 .063 .068 .004 MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 23.57 23.67 20.57 BSC 11.12 11.23 6.30 6.40 6.12 6.22 0.64 BSC 5.05 4.90 .18 .28 1.60 1.73 .10
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 1337 - 03 ISSUE C TO - 272- 2 PLASTIC MRF6S9060MBR1
RF Device Data Freescale Semiconductor
EEEEE EEEEE EEEEE EEEEE EEEEE EEEEE EEEEE EEEEE EEEEE EEEEE EEEEE EEEEE EEEEE
E2 VIEW Y - Y
PIN 3
1
NOTE 8
MRF6S9060MR1 MRF6S9060MBR1 15
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MRF6S9060MR1 MRF6S9060MBR1
Rev. 16 2, 5/2006 Document Number: MRF6S9060
RF Device Data Freescale Semiconductor

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